English
Language : 

MUN531335DW1 Datasheet, PDF (4/7 Pages) ON Semiconductor – Complementary Bias Resistor Transistors
◁
MUN531335DW1
ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q2 (NPN))
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
−
nAdc
−
100
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
−
nAdc
−
500
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
mAdc
−
0.1
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
−
Vdc
−
Collector-Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
Vdc
−
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
hFE
80
140
−
Collector-Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
−
V
−
0.25
Input Voltage (Off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Vdc
−
1.2
−
Input Voltage (On)
(VCE = 0.2 V, IC = 3.0 mA)
Vi(on)
Vdc
−
1.9
−
Output Voltage (On)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
−
Vdc
−
0.2
Output Voltage (Off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
−
Vdc
−
Input Resistor
R1
32.9
47
61.1
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
400
350
300
250
200
150
100
50
1.0 × 1.0 Inch Pad
0
−50 −25 0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
www.onsemi.com
4
 ▷