MUN531335DW1 Datasheet, PDF (2/7 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

MUN531335DW1
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN531335DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
P_D
T_A = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R_qJA
MUN531335DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
P_D
T_A = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 2)
(Note 1)
R_qJA
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
R_qJL
Junction and Storage Temperature Range
T_J, T_stg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
Max
187
256
1.5
2.0
670
490
250
385
2.0
3.0
493
325
188
208
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
°C
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