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MUN531335DW1 Datasheet, PDF (3/7 Pages) ON Semiconductor – Complementary Bias Resistor Transistors
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MUN531335DW1
ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 (PNP))
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
nAdc
−
−
100
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
nAdc
−
−
500
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
mAdc
−
−
0.2
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Vdc
50
−
−
Collector−Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
Vdc
50
−
−
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 5.0 mA, VCE = 10 V)
hFE
80
140
−
Collector−Emitter Saturation Voltage (Note 4)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
−
Vdc
−
0.25
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Input Voltage (on)
(VCE = 0.2 V, IC = 5.0 mA)
Vi(off)
Vdc
−
0.6
−
Vi(on)
Vdc
−
0.8
−
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
Vdc
−
−
0.2
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
VOH
Vdc
4.9
−
−
R1
1.5
2.2
2.9
kW
Resistor Ratio
R1/R2
0.038 0.047 0.056
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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