MMBT5401W Datasheet, PDF (4/6 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulate Transistor

MMBT5401W
0.20
0.18
0.15
I_C/I_B = 10
1.0
I_C/I_B = 10
0.9
0.8
−55°C
25°C
0.13 _150°C
0.10
25°C
0.08
0.05 ^{−55°C}
0.7
0.6
150°C
0.5
0.4
0.03
0
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
0.3
0.2
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
1.1
1.0 V_CE = 10 V
0.9
0.8
−55°C
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 6. Base Emitter Voltage vs. Collector
Current
2.5
2.0
T_J = - 55°C to 135°C
1.5
1.0
0.5
q_VC for V_CE(sat)
0
-0.5
-1.0
-1.5
-2.0
q_VB for V_BE(sat)
-2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
I_C, COLLECTOR CURRENT (mA)
Figure 7. Temperature Coefficients
100
70
V_BB
V_CC
50
10.2 V
+ 8.8 V
-30 V
30
V_in
100
3.0 k R_C
20
10 ms
INPUT PULSE
0.25 mF _RB
5.1 k
V_out
10
7.0
5.0
t_r, t_f ≤ 10 ns
V_in
100
1N914
3.0
DUTY CYCLE = 1.0%
2.0
T_J = 25°C
C_ibo
C_obo
Values Shown are for I_C @ 10 mA
Figure 8. Switching Time Test Circuit
1.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
V_R, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
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