MMBT5401W Datasheet, PDF (3/6 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulate Transistor

1000
100
MMBT5401W
T_J = 150°C
T_J = 25°C
T_J = −55°C
V_CE = 5 V
10
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
I_C = 1.0 mA
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005 0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I_B, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
10³
10^{2 VCE = 30 V}
10¹
T_J = 125°C
10⁰
75°C
10^-1
REVERSE
10^-2
25°C
I_C = I_CES
FORWARD
10^-3
0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
V_BE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut−Off Region
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