|
MMBT5401W Datasheet, PDF (1/6 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulate Transistor | |||
|
MMBT5401W
High Voltage Transistor
PNP Silicon
Features
⢠NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECâQ101
Qualified and PPAP Capable
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector âEmitter Voltage
VCEO
â150
Vdc
Collector âBase Voltage
VCBO
â160
Vdc
Emitter âBase Voltage
VEBO
â5.0
Vdc
Collector Current â Continuous
IC
â500
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FRâ 5 Board (Note 2)
TA = 25°C
Derate Above 25°C
PD
400
mW
3.2
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA
312
°C/W
Junction and Storage Temperature
TJ, Tstg â 55 to +150 °C
1. FRâ5 @ 100 mm2, 0.5 oz. copper traces, still air.
2. FRâ 5 = 1.0 0.75 0.062 in.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
SCâ70 (SOTâ323)
CASE 419
STYLE 3
MARKING DIAGRAM
4W MG
G
1
4W = Specific Device Code
M
= Date Code*
G
= PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package Shippingâ
MMBT5401WT1G,
SCâ70 3000 / Tape &
NSVMMBT5401WT1G (PbâFree)
Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
March, 2015 â Rev. 2
Publication Order Number:
MMBT5401W/D
|
▷ |