MJL4281A_13 Datasheet, PDF (4/5 Pages) ON Semiconductor – Complementary NPN-PN Silicon Power Bipolar Transistors

MJL4281A (NPN) MJL4302A (PNP)
TYPICAL CHARACTERISTICS
1.4
2.5
1.2
2.0
1.0
0.8
1.5
0.6
1.0
0.4
0.5
0.2
0.0
0.01
0.1
1
10
100
I_C, COLLECTOR CURRENT (A)
Figure 7. Typical Base−Emitter Voltages,
NPN MJL4281A
0.0
0.01
0.1
1
10
100
I_C, COLLECTOR CURRENT (A)
Figure 8. Typical Base−Emitter Voltages,
PNP MJL4302A
70
60
V_CE = 5 V
50
40
V_CE = 10 V
30
20
10 _{TJ = 25°C}
f_test = 1 MHz
0
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 9. Typical Current Gain Bandwidth Product,
NPN MJL4281A
70
60
V_CE = 5 V
50
V_CE = 10 V
40
30
20
10 T_J = 25°C
f_test = 1 MHz
0
0.1
1
10
Figure 10. Typical Current Gain Bandwidth Product,
PNP MJL4302A
100
100
10 mS
10 mS
10
1 Sec
10
1 Sec
1
100 mS
1
100 mS
0.1
0.1
0.01 ^{TJ = 25°C}
1
10
0.01 ^{TJ = 25°C}
100
1000
1
10
100
1000
V_ce, COLLECTOR−EMITTER VOLTAGE (V)
V_ce, COLLECTOR−EMITTER VOLTAGE (V)
Figure 11. Active Region Safe Operating Area,
NPN MJL4281A
Figure 12. Active Region Safe Operating Area,
PNP MJL4302A
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