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| MJL4281A_13 Datasheet, PDF (2/5 Pages) ON Semiconductor – Complementary NPN-PN Silicon Power Bipolar Transistors | |||
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MJL4281A (NPN) MJL4302A (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage
(IC = 50 mA, IB = 0)
Collector Cutâoff Current
(VCE = 200 V, IB = 0)
Collector Cutoff Current
(VCB = 350 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1.0 s (nonârepetitive)
(VCE = 100 Vdc, t = 1.0 s (nonârepetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 3.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
(IC = 8.0 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
CollectorâEmitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 Adc)
EmitterâBase Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 A)
BaseâEmitter ON Voltage
(IC = 8.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
CurrentâGain â Bandwidth Product
(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz)
Symbol
VCE(sus)
ICEO
ICBO
IEBO
IS/b
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
Min
Max
Unit
350
Vdc
100
mAdc
mAdc
â
50
mAdc
â
5.0
Adc
4.5
â
1.0
â
â
80
250
80
250
80
250
80
250
50
â
10
â
Vdc
â
1.0
Vdc
â
1.4
Vdc
â
1.5
MHz
35
â
pF
â
600
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