MJL4281A_13 Datasheet, PDF (3/5 Pages) ON Semiconductor – Complementary NPN-PN Silicon Power Bipolar Transistors

MJL4281A (NPN) MJL4302A (PNP)
TYPICAL CHARACTERISTICS
1000
1000
T_J = 100°C
100
T_J = 25°C
T_J = 100°C
100
T_J = 25°C
10
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain, V_CE = 5 V,
NPN MJL4281A
1000
10
100
0.01
0.1
1
10
100
I_C, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain, V_CE = 5 V,
PNP MJL4302A
1000
T_J = 100°C
T_J = 25°C
100
T_J = 100°C
100
T_J = 25°C
10
0.01
0.1
1
10
100
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain, V_CE = 20 V,
NPN MJL4281A
10
0.01
0.1
1
10
100
I_C, COLLECTOR CURRENT (A)
Figure 4. DC Current Gain, V_CE = 20 V,
PNP MJL4302A
1.4
1.2
1
0.8
V_be(sat)
0.6
0.4
0.2
0
0.01
V_ce(sat)
T_J = 25°C
I_c/I_b = 10
0.1
1
10
100
I_C, COLLECTOR CURRENT (A)
Figure 5. Typical Saturation Voltage,
NPN MJL4281A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
V_be(sat)
V_ce(sat)
T_J = 25°C
I_c/I_b = 10
0.1
1
10
100
I_C, COLLECTOR CURRENT (A)
Figure 6. Typical Saturation Voltage,
PNP MJL4302A
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