MJL21195_05 Datasheet, PDF (4/8 Pages) ON Semiconductor – 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

MJL21195, MJL21196
TYPICAL CHARACTERISTICS
3.0
2.5 ^TJ ^{= 25°C}
I_C/I_B = 10
2.0
PNP MJL21195
1.5
1.0
V_BE(sat)
0.5
0
0.1
V_CE(sat)
1.0
10
I_C, COLLECTOR CURRENT (A)
NPN MJL21196
1.4
T_J = 25°C
1.2 _{IC/IB = 10}
1.0
0.8
V_BE(sat)
0.6
0.4
0.2
0
100
0.1
V_CE(sat)
1.0
10
100
I_C, COLLECTOR CURRENT (A)
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJL21195
10
T_J = 25°C
NPN MJL21196
10
T_J = 25°C
1.0
1.0
V_CE = 20 V
V_CE = 5 V
0.1
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (A)
Figure 11. Typical Base−Emitter Voltage
V_CE = 20 V
V_CE = 5 V
0.1
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (A)
Figure 12. Typical Base−Emitter Voltage
100
10
1.0
0.1
1.0
10 ms
1 Sec
50 ms
250 ms
10
100
V_CE, COLLECTOR−EMITTER VOLTAGE (V)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I_C − V_CE lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dis-
sipation than the curves indicate.
The data of Figure 13 is based on T_J(pk) = 150°C; T_C is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
1000
Figure 13. Active Region Safe Operating Area
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