MJL21195_05 Datasheet, PDF (2/8 Pages) ON Semiconductor – 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

MJL21195, MJL21196
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage
(I_C = 100 mAdc, I_B = 0)
V_CEO(sus)
250
−
−
Collector Cutoff Current
(V_CE = 200 Vdc, I_B = 0)
I_CEO
−
−
100
OFF CHARACTERISTICS (Note 3)
Emitter Cutoff Current
(V_CE = 5 Vdc, I_C = 0)
I_EBO
−
−
100
Collector Cutoff Current
(V_CE = 250 Vdc, V_BE(off) = 1.5 Vdc)
I_CEX
−
−
100
SECOND BREAKDOWN (Note 3)
Second Breakdown Collector Current with Base Forward Biased
(V_CE = 50 Vdc, t = 1 s (Nonrepetitive)
(V_CE = 80 Vdc, t = 1 s (Nonrepetitive)
ON CHARACTERISTICS (Note 3)
I_S/b
4.0
−
−
2.25
−
−
DC Current Gain
(I_C = 8 Adc, V_CE = 5 Vdc)
(I_C = 16 Adc, I_B = 5 Adc)
h_FE
25
8.0
−
100
−
−
Base−Emitter On Voltage
(I_C = 8 Adc, V_CE = 5 Vdc)
V_BE(on)
−
−
2.2
Collector−Emitter Saturation Voltage
(I_C = 8 Adc, I_B = 0.8 Adc)
(I_C = 16 Adc, I_B = 3.2 Adc)
V_CE(sat)
−
−
−
1.4
−
4
DYNAMIC CHARACTERISTICS (Note 3)
Total Harmonic Distortion at the Output
V_RMS = 28.3 V, f = 1 kHz, P_LOAD = 100 W_RMS
(Matched pair h_FE = 50 @ 5 A/5 V)
T_HD
h_FE
unmatched
−
0.8
−
h_FE
matched
−
0.08
−
Current Gain Bandwidth Product
(I_C = 1 Adc, V_CE = 10 Vdc, f_test = 1 MHz)
f_T
4
−
−
Output Capacitance
(V_CB = 10 Vdc, I_E = 0, f_test = 1 MHz)
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%.
C_ob
−
−
500
PNP MJL21195
6.5
6.0
V_CE = 10 V
5.5
5.0
4.5
V_CE = 5 V
4.0
3.5
3.0
T_J = 25°C
f_test = 1 MHz
2.5
2.0
0.1
1.0
I_C, COLLECTOR CURRENT (A)
Figure 1. Typical Current Gain
Bandwidth Product
NPN MJL21196
7.5
7.0
6.5
V_CE = 10 V
6.0
5.5
5.0
V_CE = 5 V
4.5
4.0
3.5
3.0
2.5 ^{TJ = 25°C}
2.0 ^{ftest = 1 MHz}
1.5
1.0
10
0.1
1.0
I_C, COLLECTOR CURRENT (A)
Figure 2. Typical Current Gain
Bandwidth Product
Unit
Vdc
mAdc
mAdc
mAdc
Adc
Vdc
Vdc
%
MHz
pF
10
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