MJL21195_05 Datasheet, PDF (3/8 Pages) ON Semiconductor – 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

MJL21195, MJL21196
TYPICAL CHARACTERISTICS
PNP MJL21195
1000
NPN MJL21196
1000
T_J = 100°C
100
25°C
−25 °C
V_CE = 20 V
10
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain, V_CE = 20 V
100
T_J = 100°C
25°C
−25 °C
V_CE = 20 V
10
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (A)
Figure 4. DC Current Gain, V_CE = 20 V
PNP MJL21195
1000
NPN MJL21196
1000
T_J = 100°C
100
25°C
−25 °C
V_CE = 5 V
10
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (A)
Figure 5. DC Current Gain, V_CE = 5 V
PNP MJL21195
30
2.0 A
25
1.5 A
20
1.0 A
15
I_B = 0.5 A
10
100
T_J = 100°C
25°C
−25 °C
V_CE = 5 V
10
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain, V_CE = 5 V
NPN MJL21196
30
2.0 A
25
1.5 A
1.0 A
20
I_B = 0.5 A
15
10
5.0
T_J = 25°C
0
0
5.0
10
15
20
25
V_CE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Typical Output Characteristics
5.0
T_J = 25°C
0
0
5.0
10
15
20
25
V_CE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 8. Typical Output Characteristics
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