MJE5740_06 Datasheet, PDF (4/6 Pages) ON Semiconductor – NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS

MJE5740, MJE5742
Table 1. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE
SWITCHING
P_W
DUTY CYCLE ≤ 10% ₆₈
t_r, t_f ≤ 10 ns
+5 V
1N493 ³³
3
MJE21
0.001 mF
0
33 1N493
3
2N222
1
2
R_B
k
1
I_B
+5 Vk
V_CC
L
I_C
1N493
NOTE:
3
0.02 mF ²⁷⁰
PW and V_CC Adjusted for Desired I_C
R_B Adjusted for Desired I_B1
1
k _2N2905
47 ₁₀₀
1/2
W
T.U.T.
MJE20
0
− V_BE(off)
MR826
*
V_clamp
*SELECTED FOR ≥ 1 kV
5.1
k ^VCE
51
+V_CC
R_C
TUT
R_B
SCOPE
D
1
−4 V
COIL DATA:
FERROXCUBE CORE #6656
FULL BOBBIN (~16 TURNS) #16
GAP FOR 200 mH/20 A
L_coil = 200 mH
V_CC = 30 V
V_CE(pk) = 250 Vdc
I_C(pk) = 6 A
V_CC = 250 V
D1 = 1N5820 OR EQUIV.
OUTPUT WAVEFORMS
I_C
I_C(pk)
t_f
CLAMPED
t
t₁
t_f
V_CE
V_CE OR
V_clamp
t
TIM-
t₂
E
t₁ ADJUSTED TO
OBTAIN I_C
t₁ ≈
L_coil (I_Cpk)
V_CC
t₂ ≈
L_coil (I_Cpk)
V_clamp
TEST EQUIPMENT
SCOPE−TEKTRONICS
475 OR EQUIVALENT
+10 V
25 ms
0
− 9.2 V
t_r, t_f < 10 ns
DUTY CYCLE = 1%
R_B AND R_C ADJUSTED
FOR DESIRED I_B AND I_C
1.8
1.6
h_FE = 20
1.4
1.2
1
−55 °C
0.8
+25 °C
0.6
+150°C
0.4
0.2
0.1
0.2
0.5
1
2
5
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 5. Inductive Switching Measurements
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