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MJE5740_06 Datasheet, PDF (3/6 Pages) ON Semiconductor – NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS
MJE5740, MJE5742
TYPICAL CHARACTERISTICS
100
80
SECOND BREAKDOWN DERATING
60
THERMAL DERATING
40
20
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
IC(pk)
VCE(pk)
90% VCE(pk) 90% IC
IC
tsv
trv
tfi
tti
VCE
IB
90% IB1
tc
10% VCE(pk)
10%
IC(pk) 2% IC
TIME
Figure 2. Inductive Switching Measurements
2000
2.4
1000
VCE = 5 V
100
150°C
+25 °C
−55 °C
2.2
hFE = 20
2
1.8
−55 °C
1.6
1.4
+25 °C
1.2
1
+150°C
0.8
0.6
10
0.1
0.4
1
2
5
10
0.2
0.5
1
2
5
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
Figure 4. Base−Emitter Voltage
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