MJE5740_06 Datasheet, PDF(2/6 Page) ON Semiconductor – NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS

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MJE5740_06 Datasheet, PDF (2/6 Pages) ON Semiconductor – NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS

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MJE5740, MJE5742

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic

Symbol

Min

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ OFF CHARACTERISTICS (Note 2)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Sustaining Voltage

(IC = 50 mA, IB = 0)

MJE5740 VCEO(sus)

300

MJE5742

400

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)

ICEV

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)

IEBO

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ SECOND BREAKDOWN

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Second Breakdown Collector Current with Base Forward Biased

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Clamped Inductive SOA with Base Reverse Biased

IS/b

RBSOA

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ON CHARACTERISTICS (Note 2)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)

(IC = 4 Adc, VCE = 5 Vdc)

hFE

200

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)

VCE(sat)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ BaseâEmitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)

VBE(sat)

BaseâEmitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ BaseâEmitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Diode Forward Voltage (Note 3) (IF = 5 Adc)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ SWITCHING CHARACTERISTICS

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Typical Resistive Load (Table 1)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Delay Time

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rise Time

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Storage Time

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Fall Time

(VCC = 250 Vdc, IC(pk) = 6 A

IB1 = IB2 = 0.25 A, tp = 25 ms,

Duty Cycle v 1%)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Inductive Load, Clamped (Table 1)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Voltage Storage Time

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Crossover Time

(IC(pk) = 6 A, VCE(pk) = 250 Vdc

IB1 = 0.06 A, VBE(off) = 5 Vdc)

tsv

Typ

Max

Unit

Vdc

mAdc

See Figure 6

See Figure 7

100

400

Vdc

2.2

2.5

Vdc

3.5

2.4

2.5

Vdc

0.04

0.5

2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2%.

3. The internal CollectorâtoâEmitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the

Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.

ORDERING INFORMATION

Device

MJE5740

MJE5740G

MJE5742

MJE5742G

Package

TOâ220

(PbâFree)

TOâ220

(PbâFree)

Shipping

50 Units / Rail

http://onsemi.com

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