MJE4343_06 Datasheet, PDF (4/7 Pages) ON Semiconductor – High−Voltage  High Power Transistors

MJE4343 MJE4353
DC CURRENT GAIN
1000
1000
100
50
20
10
0.2
V_CE = 2 V
T_J = 150°C
25°C
−55 °C
0.5
1.0
2.0
5.0
10
20
I_C, COLLECTOR CURRENT (AMPS)
Figure 6. MJE4340 Series (NPN)
100
10
0.2
VV_{CCE E} = = 2 2 VV
TT_JJ==115500°°CC
2255°°CC
−−5555°°CC
0.5
1.0
2.0
5.0
10
20
I_C, COLLECTOR CURRENT (AMPS)
Figure 7. MJE4350 Series (PNP)
2.0
1.6
I_C = 4.0 A
8.0 A
1.2
T_J = 25°C
16 A
0.8
0.4
0
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
I_B, BASE CURRENT (AMP)
2.0 3.0 5.0
Figure 8. Collector Saturation Region
1.0
0.5
D = 0.5
0.2
0.2
0.1
0.1 _0.05
0.05 ^0.02
0.01
0.02 ^SINGLE
PULSE
0.01
0.02
0.05 0.1 0.2
θ_JC(t) = r(t) θ_JC
θ_JC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) − T_C = P_(pk) θ_JC(t)
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
50 100 200
Figure 9. Thermal Response
500 1000 2000
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