MJE4343_06 Datasheet, PDF (3/7 Pages) ON Semiconductor – High−Voltage  High Power Transistors

MJE4343 MJE4353
V_CC
+30 V
3.0
2.0
25 μs
+11 V
R_B
0
R_C
SCOPE
1.0
0.7
0.5
T_J = 25°C
I_C/I_B = 10
V_CE = 30 V
t_r
−9.0 V
51
D₁
t_r, t_f ≤ 10 ns
DUTY CYCLE = 1.0%
−4 V
R_B and R_C VARIED TO OBTAIN DESIRED CURRENT LEVELS
D₁ MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I_B ≈ 100 mA
MSD6100 USED BELOW I_B ≈ 100 mA
Note: Reverse polarities to test PNP devices.
0.3
0.2
0.1
0.07
t_d @ V_BE(off) = 5.0 V
0.05
0.03
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
I_C, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit
Figure 3. Typical Turn−On Time
TYPICAL CHARACTERISTICS
5.0
T_J = 25°C
3.0
I_C/I_B = 10
t_s
I_B1 = I_B2
V_CE = 30 V
2.0
1.0
t_f
0.7
0.5
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
I_C, COLLECTOR CURRENT (AMP)
Figure 4. Turn−Off Time
2.0
T_J = 25°C
1.6
1.2
0.8 ^{VBE(sat) @ IC/IB = 10}
V_BE @ V_CE = 2.0 V
0.4
V_CE(sat) @ I_C/I_B = 10
0
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
I_C, COLLECTOR CURRENT (AMP)
Figure 5. On Voltages
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