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MJE4343_06 Datasheet, PDF (1/7 Pages) ON Semiconductor – High−Voltage High Power Transistors | |||
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ON Semiconductort
HighâVoltage Ä High Power
Transistors
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
⢠High CollectorâEmitter Sustaining Voltage â
NPN
PNP
VCEO(sus) = 160 Vdc â MJE4343 MJE4353
⢠High DC Current Gain â @ IC = 8.0 Adc hFE = 35 (Typ)
⢠Low CollectorâEmitter Saturation Voltage â
VCE(sat) = 2.0 Vdc (Max) @ IC
= 8.0 Adc
w These devices are available in Pbâfree package(s). Specifications herein
apply to both standard and Pbâfree devices. Please see our website at
www.onsemi.com for specific Pbâfree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
Symbol
Max
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Peak (1)
VCEO
160
VCB
160
VEB
7.0
IC
16
20
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TC = 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
Temperature Range
IB
PD
TJ, Tstg
5.0
125
â 65 to + 150
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
Max
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Case
RθJC
1.0
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà (1) Pulse Test: Pulse Width v 5.0 μs, Duty Cycle w 10%.
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
_C
Unit
_C/W
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
© Semiconductor Components Industries, LLC, 2006
March, 2006 â Rev. 4
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
Reference: Ambient Temperature
1
NPN
MJE4343
PNP
MJE4353
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
160 VOLTS
CASE 340Dâ02
TOâ218 TYPE
Publication Order Number:
MJE4343/D
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