MJE4343 Datasheet, PDF (4/6 Pages) ON Semiconductor – POWER TRANSISTORS COMPLEMENTARY SILICON

MJE4343 MJE4353
1.0
0.5
D = 0.5
0.2
0.2
0.1
0.1 _0.05
0.05 ^0.02
0.01
0.02 ^{SINGLE PULSE}
0.01
0.02
0.05 0.1 0.2
θ_JC(t) = r(t) θ_JC
θ_JC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θ_JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
50 100 200
Figure 9. Thermal Response
500 1000 2000
100
50
20
5.0 ms
10
5.0
dc
2.0
1.0
0.5
0.2
0.1
3.0
SECONDARY BREAKDOWN LIMITED
THERMAL LIMIT TC = 25°C
BONDING WIRE LIMITED
5.0 7.0 10
20 30 50 70 100 150 200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 10. Maximum Forward Bias Safe
Operating Area
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during re-
verse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an ava-
lanche mode. Figure 11 gives RBSOA characteristics.
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 10 may be found at any case tem-
perature by using the appropriate curve on Figure 9.
20
16
TJ = 100°C
VBE(off) ≤ 5 V
12
8.0
4.0
20 40 60 80 100 120 140 160 180
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 11. Maximum Reverse Bias Safe
Operating Area
4
Motorola Bipolar Power Transistor Device Data