MJE4343 Datasheet, PDF (3/6 Pages) ON Semiconductor – POWER TRANSISTORS COMPLEMENTARY SILICON

TYPICAL CHARACTERISTICS
MJE4343 MJE4353
5.0
TJ = 25°C
3.0
IC/IB = 10
ts
IB1 = IB2
VCE = 30 V
2.0
1.0
tf
0.7
0.5
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
Figure 4. Turn–Off Time
2.0
TJ = 25°C
1.6
1.2
0.8 ^{VBE(sat) @ IC/IB = 10}
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
Figure 5. On Voltages
DC CURRENT GAIN
1000
1000
100
50
20
10
0.2
VCE = 2 V
TJ = 150°C
25°C
– 55°C
0.5
1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (AMPS)
Figure 6. MJE4340 Series (NPN)
100
10
0.2
VVCCEE==22VV
TTJJ==115500°°CC
2255°°CC
––5555°°CC
0.5
1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (AMPS)
Figure 7. MJE4350 Series (PNP)
2.0
1.6
IC = 4.0 A
8.0 A
1.2
TJ = 25°C
16 A
0.8
0.4
0
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IB, BASE CURRENT (AMP)
2.0 3.0 5.0
Figure 8. Collector Saturation Region
Motorola Bipolar Power Transistor Device Data
3