MJE4343 Datasheet, PDF (1/6 Pages) ON Semiconductor – POWER TRANSISTORS COMPLEMENTARY SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High-Voltage Ċ High Power
Transistors
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
• High Collector–Emitter Sustaining Voltage —
NPN
PNP
VCEO(sus) = 160 Vdc — MJE4343 MJE4353
• High DC Current Gain — @ IC = 8.0 Adc
hFE = 35 (Typ)
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector Current — Continuous}
Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
R_θJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{v w (1) Pulse Test: Pulse Width 5.0 µs, Duty Cycle 10%.}
Max
160
160
7.0
16
20
5.0
125
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
_C
Max
Unit
1.0
_C/W
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
Reference: Ambient Temperature
Order this document
by MJE4343/D
NPN
MJE4343
PNP
MJE4353
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
160 VOLTS
CASE 340D–02
TO–218 TYPE
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la98_{r Power Transistor Device Data}
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