MJE243G_14 Datasheet, PDF (4/6 Pages) ON Semiconductor – Complementary Silicon Power Plastic Transistors

MJE243G (NPN), MJE253G (PNP)
10
5.0
100 ms _500 ms
2.0
1.0 ms
1.0
0.5
0.2
0.1
0.05
0.02
0.01
1.0
dc
T_J = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
T_C = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
 RATED V_CEO
5.0 ms
MJE243/MJE253
2.0 3.0 5.0 7.0 10
20 30 50 70 100
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T_J(pk) = 150_C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
≤ 150_C. T_J(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
5K
V_CC = 30 V
3K
t_s
I_C/I_B = 10
2K
I_B1 = I_B2
1K
T_J = 25°C
500
300
200
100
50
30
20
t_f
NPN MJE243
PNP MJE253
10
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10
I_C, COLLECTOR CURRENT (AMPS)
Figure 6. Turn−Off Time
200
100
70
50
30
20
10
1.0
T_J = 25°C
C_ib
C_ob
MJE243 (NPN)
MJE253 (PNP)
2.0 3.0 5.0 7.0 10
20 30
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 70 100
http://onsemi.com
4