MJE243G_14 Datasheet, PDF (3/6 Pages) ON Semiconductor – Complementary Silicon Power Plastic Transistors

MJE243G (NPN), MJE253G (PNP)
16
1.6
12
1.2
8.0
0.8
4.0
0.4
0
0
20
40
60
80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
V_CC
+ 30 V
+11 V
0
25 ms
- 9.0 V
R_B
51
R_C
SCOPE
D₁
t_r, t_f ≤ 10 ns
DUTY CYCLE = 1.0%
- 4 V
R_B and R_C VARIED TO OBTAIN DESIRED CURRENT LEVELS
 D₁ MUST BE FAST RECOVERY TYPE, e.g.:
  1N5825 USED ABOVE I_B ≈ 100 mA
  MSD6100 USED BELOW I_B ≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
Figure 2. Switching Time Test Circuit
1K
500
300
t_r
200
100
50
30
20
10
t_d
5
3
NPN MJE243
2
PNP MJE253
V_CC = 30 V
I_C/I_B = 10
T_J = 25°C
1
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1
2 3 5 10
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. Turn−On Time
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.01
0.03
0.02 ^{0 (SINGLE PULSE)}
0.01
0.02
0.05
0.1
0.2
q_JC(t) = r(t) q_JC
q_JC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) q_JC(t)
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
Figure 4. Thermal Response
50
100
200
http://onsemi.com
3