MJE243G_14 Datasheet, PDF(2/6 Page) ON Semiconductor – Complementary Silicon Power Plastic Transistors

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MJE243G_14 Datasheet, PDF (2/6 Pages) ON Semiconductor – Complementary Silicon Power Plastic Transistors

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MJE243G (NPN), MJE253G (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorâEmitter Sustaining Voltage

(IC = 10 mAdc, IB = 0)

VCEO(sus)

100

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

(VCE = 100 Vdc, IE = 0, TC = 125_C)

ICBO

0.1

Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

IEBO

mAdc

0.1

ON CHARACTERISTICS

DC Current Gain

(IC = 200 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

hFE

180

CollectorâEmitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

VCE(sat)

0.3

0.6

BaseâEmitter Saturation Voltage

(IC = 2.0 Adc, IB = 200 mAdc)

VBE(sat)

1.8

BaseâEmitter On Voltage

(IC = 500 mAdc, VCE = 1.0 Vdc)

VBE(on)

1.5

DYNAMIC CHARACTERISTICS

CurrentâGain â Bandwidth Product

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Cob

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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