MJE171_06 Datasheet, PDF (4/6 Pages) ON Semiconductor – Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
1.0
ACTIVE−REGION SAFE OPERATING AREA
100 ms
500 ms
dc
T_J = 150°C
5.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED @
T_C = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V_CEO
MJE171
MJE172
2.0 3.0 5.0
10
20 30 50
100
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. MJE171, MJE172
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
1.0
100 ms
5.0 ms
dc
T_J = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
T_C = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW _MJE181
RATED V_CEO
MJE182
500 ms
2.0 3.0 5.0 7.0 10
20 30 50 70 100
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. MJE181, MJE182
There are two limitations on the power handling ability of
a transistor − average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on T_J(pk) = 150°C; T_C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T_J(pk) t 150°C. T_J(pk) may be calculated from the data in
Figure 4. At high case temperature, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
5K
V_CC = 30 V
3K
I_C/I_B = 10
2K
I_B1 = I_B2
1K
T_J = 25°C
500
300
t_s
200
100
50
t_f
30
20
NPN MJE181/182
PNP MJE171/172
10
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5
I_C, COLLECTOR CURRENT (AMPS)
Figure 7. Turn−Off Time
100
PNP MJE171/MJE172
70
NPN MJE181/MJE182
50
C_ib
T_J = 25°C
30
20
C_ob
10
10 ^{0.5 0.7 1.0}
2.0 3.0 5.0 7.0 10
20 30 50
V_R, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
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