MJE171_06 Datasheet, PDF (3/6 Pages) ON Semiconductor – Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
T_A T_C
2.8 14
2.4 12
2.0 10
1.6 8.0
1.2 6.0
0.8 4.0
0.4 2.0
00
20
T_C
T_A
40
60
80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
V_CC
+30 V
+11 V
0
25 ms
−9.0 V
R_B
51
R_C
SCOPE
D₁
t_r, t_f ≤ 10 ns
DUTY CYCLE =
−4 V
1.0%
R_B and R_C VARIED TO OBTAIN DESIRED CURRENT LEVELS
D₁ MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I_B ≈ 100 mA
MSD6100 USED BELOW I_B ≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
Figure 2. Switching Time Test Circuit
1K
500
V_CE = 30 V
300
200
I_C/I_B = 10
t_r
V_BE(off) = 4.0 V
T_J = 25°C
100
50
30
20
t_d
10
5
3
2
NPN MJE181/182
PNP MJE171/172
1
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1
2 3 5 10
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. Turn−On Time
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07
0.05
0.02
0.01
0.03 _{0 (SINGLE PULSE)}
0.02
0.01
0.02
0.05
0.1
0.2
q_JC(t) = r(t) q_JC
q_JC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) − T_C = P_(pk) q_JC(t)
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
Figure 4. Thermal Response
50
100
200
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