MJE171_06 Datasheet, PDF (1/6 Pages) ON Semiconductor – Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS

MJE170, MJE171, MJE172
(PNP), MJE180, MJE181,
MJE182 (NPN)
Preferred Device
Complementary Plastic
Silicon Power Transistors
The MJE170/180 series is designed for low power audio amplifier
and low current, high speed switching applications.
Features
• Collector−Emitter Sustaining Voltage −
V_CEO(sus) = 40 Vdc − MJE170, MJE180
= 60 Vdc − MJE171, MJE181
= 80 Vdc − MJE172, MJE182
• DC Current Gain −
h_FE = 30 (Min) @ I_C = 0.5 Adc
= 12 (Min) @ I_C = 1.5 Adc
• Current−Gain − Bandwidth Product −
f_T = 50 MHz (Min) @ I_C = 100 mAdc
• Annular Construction for Low Leakages −
I_CBO = 100 nA (Max) @ Rated V_CB
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Machine Model, C
Human Body Model, 3B
• Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^Rating
Symbol Value
Unit
Collector−Base Voltage
V_CB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MJE170, MJE180}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{MJE171, MJE181}
MJE172, MJE182
Vdc
60
80
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Voltage}
V_CEO
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{MJE170, MJE180}
40
MJE171, MJE181
60
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MJE172, MJE182}
80
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage
Collector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{− Peak}
V_EB
7.0
Vdc
I_C
3.0
Adc
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25_C}
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TA = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Temperature Range}
I_B
P_D
P_D
T_J, T_stg
1.0
1.5
0.012
12.5
0.1
−65 to +150
Adc
W
W/_C
W
W/_C
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be
affected.
http://onsemi.com
3 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
40 − 60 − 80 VOLTS
12.5 WATTS
321
TO−225AA
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
JE1xxG
Y
WW
JE1xx
G
= Year
= Work Week
= Specific Device Code
x = 70, 71, 72, 80, 81, or 82
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 9
Publication Order Number:
MJE171/D