MC74VHCT259A Datasheet, PDF (4/9 Pages) ON Semiconductor – 8−Bit Addressable Latch/1−of−8 Decoder CMOS Logic Level Shifter with LSTTL−Compatible Inputs

MC74VHCT259A
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
Positive DC Supply Voltage
Digital Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V_CC and GND Pins
Power Dissipation in Still Air
−0.5 to +7.0
V
−0.5 to +7.0
V
Output in 3−State
−0.5 to +7.0
V
High or Low State
−0.5 to V_CC +0.5
−20
mA
$20
mA
$25
mA
$75
mA
SOIC Package
200
mW
TSSOP
180
T_STG
V_ESD
Storage Temperature Range
ESD Withstand Voltage
−65 to +150
°C
Human Body Model (Note 1)
>2000
V
Machine Model (Note 2)
>200
Charged Device Model (Note 3)
>2000
I_LATCHUP
q_JA
Latchup Performance
Above V_CC and Below GND at 125°C (Note 4)
Thermal Resistance, Junction−to−Ambient
SOIC Package
TSSOP
$300
143
164
mA
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
V_CC
DC Supply Voltage
V_IN
DC Input Voltage
V_OUT DC Output Voltage
T_A
Operating Temperature Range, all Package Types
t_r, t_f
Input Rise or Fall Time
Min
4.5
0
Output in 3−State
0
High or Low State
0
−55
V_CC = 5.0 V + 0.5 V
0
Max
5.5
5.5
5.5
V_CC
125
20
Unit
V
V
V
°C
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS TIME TO
0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1
10
100
1000
TIME, YEARS
Figure 5. Failure Rate vs. Time Junction Temperature
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