MC74VHCT00A Datasheet, PDF (4/7 Pages) Motorola, Inc – Quad 2-Input NAND Gate

MC74VHCT00A
The θ_JA of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the table and
figure below.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1
10
100
1000
TIME, YEARS
Figure 4. Failure Rate vs. Time
Junction Temperature
DC ELECTRICAL CHARACTERISTICS
Symbol
V_IH
Parameter
Minimum High--Level
Input Voltage
Test Conditions
V_IL
Maximum Low--Level
Input Voltage
V_OH
V_OL
I_IN
I_CC
I_CCT
I_OPD
Minimum High--Level
Output Voltage
V_IN = V_IH or V_IL
Maximum Low--Level
Output Voltage
V_IN = V_IH or V_IL
Maximum Input
Leakage Current
Maximum Quiescent
Supply Current
Quiescent Supply
Current
Output Leakage
Current
V_IN = V_IH or V_IL
I_OH = --50 μA
V_IN = V_IH or V_IL
I_OH = --4 mA
I_OH = --8 mA
V_IN = V_IH or V_IL
I_OL = 50 μA
V_IN = V_IH or V_IL
I_OL = 4 mA
I_OL = 8 mA
V_IN = 5.5 V or GND
V_IN = V_CC or GND
Input: V_IN = 3.4 V
V_OUT = 5.5 V
V_CC
T_A = 25°C
T_A ≤ 85°C
T_A ≤ 125°C
(V) Min Typ Max Min Max Min Max Unit
3.0 1.4
4.5 2.0
5.5 2.0
1.4
1.4
V
2.0
2.0
2.0
2.0
3.0
0.53
0.53
0.53 V
4.5
0.8
0.8
0.8
5.5
0.8
0.8
0.8
3.0 2.9 3.0
2.9
2.9
V
4.5 4.4 4.5
4.4
4.4
3.0 2.58
4.5 3.94
V
2.48
2.34
3.80
3.66
3.0
0.0 0.1
0.1
0.1
V
4.5
0.0 0.1
0.1
0.1
V
3.0
0.36
0.44
0.52
4.5
0.36
0.44
0.52
0 to
±0.1
±1.0
±1.0 μA
5.5
5.5
2.0
20
40 μA
5.5
1.35
1.50
1.65 mA
0.0
0.5
5.0
10 μA
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