MC74HC132A_06 Datasheet, PDF (4/10 Pages) ON Semiconductor – Quad 2−Input NAND Gate with Schmitt−Trigger Inputs High−Performance Silicon−Gate CMOS

MC74HC132A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
V_CC
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VT+max Maximum Positive−Going VOUT = 0.1 V}
2.0
Input Threshold Voltage
|I_OUT| v 20 mA
4.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(Figure 5)}
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VT+min Minimum Positive−Going VOUT = 0.1 V}
2.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Input Threshold Voltage}
|I_OUT| v 20 mA
4.5
(Figure 5)
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VT–max Maximum Negative−Going VOUT = VCC – 0.1 V}
2.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Input Threshold Voltage}
|I_OUT| v 20 mA
4.5
(Figure 5)
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VT–min Minimum Negative−Going VOUT = VCC – 0.1 V}
2.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Input Threshold Voltage}
|I_OUT| v 20 mA
4.5
(Figure 5)
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^VH^{max Maximum Hysteresis}
V_OUT = 0.1 V or V_CC – 0.1 V
2.0
(Note 8) ^Voltage
|I_OUT| v 20 mA
4.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Figure 5)
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ V_Hmin Minimum Hysteresis
V_OUT = 0.1 V or V_CC – 0.1 V
2.0
(Note 8) ^Voltage
|I_OUT| v 20 mA
4.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(Figure 5)}
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VOH Minimum High−Level}
V_IN v V_T−min or V_T+max
2.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Output Voltage}
|I_OUT| v 20 mA
4.5
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VOL MaximumLow−Level}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Output Voltage}
V_IN v −V_T−min or V_T+max
|I_OUT| v 4.0 mA 4.5
|I_OUT| v 5.2 mA 6.0
V_IN ≥ V_T+max
2.0
|I_OUT| v 20 mA
4.5
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VIN ≥ VT+max}
|I_OUT| v 4.0 mA 4.5
|I_OUT| v 5.2 mA 6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _IIN
Maximum Input Leakage V_IN = V_CC or GND
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ I_CC Maximum Quiescent
V_IN = V_CC or GND
6.0
Supply Current
I_OUT = 0 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(per Package)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{8. VHmin u (VT+min) * (VT−max); VHmax = (VT+max) ) (VT−min).}
*55_C to 25_C
1.5
3.15
4.2
1.0
2.3
3.0
0.9
2.0
2.6
0.3
0.9
1.2
1.2
2.25
3.0
0.2
0.4
0.5
1.9
4.4
5.9
v85_C
1.5
3.15
4.2
0.95
2.25
2.95
0.95
2.05
2.65
0.3
0.9
1.2
1.2
2.25
3.0
0.2
0.4
0.5
1.9
4.4
5.9
v125_C Unit
1.5
V
3.15
4.2
0.95
V
2.25
2.95
0.95
V
2.05
2.65
0.3
V
0.9
1.2
1.2
V
2.25
3.0
0.2
V
0.4
0.5
1.9
V
4.4
5.9
3.98
5.48
0.1
0.1
0.1
0.26
0.26
$0.1
3.84
5.34
0.1
0.1
0.1
0.33
0.33
$1.0
3.7
5.2
0.1
V
0.1
0.1
0.4
0.4
$1.0 mA
1.0
10
40
mA
9. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
http://onsemi.com
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