MBT6429DW1T1_05 Datasheet, PDF (4/5 Pages) ON Semiconductor – Amplifier Transistors NPN Silicon

MBT6429DW1T1
4.0
3.0
V_CE = 5.0 V
2.0
1.0
0.7
0.5
0.4
0.3
T_A = 125°C
25°C
−55 °C
0.2
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I_C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
1.0
−0.4
T_J = 25°C
0.8
−0.8
0.6 V_BE @ V_CE = 5.0 V
0.4
−1.2
−1.6
T_J = 25°C to 125°C
0.2
V_CE(sat) @ I_C/I_B = 10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
I_C, COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
50 100
−2.0
−55 °C to 25°C
−2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
I_C, COLLECTOR CURRENT (mA)
50 100
Figure 10. Temperature Coefficients
8.0
6.0
T_J = 25°C
4.0
C_ob
C_eb
C_ib
3.0
C_cb
2.0
1.0
0.8
0.1 0.2
0.5 1.0 2.0 5.0 10 20
V_R, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
50 100
500
300
200
100
70
V_CE = 5.0 V
T_J = 25°C
50
1.0
2.0 3.0 5.0 7.0 10
20 30
I_C, COLLECTOR CURRENT (mA)
50 70 100
Figure 12. Current−Gain − Bandwidth Product
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