MBT6429DW1T1_05 Datasheet, PDF (3/5 Pages) ON Semiconductor – Amplifier Transistors NPN Silicon

MBT6429DW1T1
NOISE CHARACTERISTICS
(V_CE = 5.0 Vdc, T_A = 25°C)
30
BANDWIDTH = 1.0 Hz
20
I_C = 10 mA
R_S ≈ 0
NOISE VOLTAGE
30
BANDWIDTH = 1.0 Hz
20
R_S ≈ 0
3.0 mA
10
1.0 mA
7.0
5.0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
3.0
10 20
300 mA
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
Figure 2. Effects of Frequency
3.0
0.01 0.02
100 kHz
0.05 0.1 0.2 0.5 1.0 2.0
I_C, COLLECTOR CURRENT (mA)
5.0 10
Figure 3. Effects of Collector Current
10
7.0
BANDWIDTH = 1.0 Hz
5.0
I_C = 10 mA
3.0
2.0
3.0 mA
1.0
1.0 mA
0.7
0.5
300 mA
0.3
100 mA
0.2
10 mA
30 mA
R_S ≈ 0
0.1
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
Figure 4. Noise Current
20
16
BANDWIDTH = 10 Hz to 15.7 kHz
12
I_C = 1.0 mA
8.0
500 mA
100 mA
4.0
10 mA
0
10 20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
R_S, SOURCE RESISTANCE (OHMS)
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
300
20
200 BANDWIDTH = 1.0 Hz
I_C = 10 mA
100
100 mA
16
70
3.0 mA
50
12
1.0 mA
30
300 mA
20
30 mA
8.0
I_C = 10 mA
3.0 mA
1.0 mA
300 mA
10
7.0
5.0
3.0
10 20
10 mA
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
R_S, SOURCE RESISTANCE (OHMS)
100 mA
4.0
30 mA
10 mA
BANDWIDTH = 1.0 Hz
0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
R_S, SOURCE RESISTANCE (OHMS)
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
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