MBT6429DW1T1_05 Datasheet, PDF (1/5 Pages) ON Semiconductor – Amplifier Transistors NPN Silicon

MBT6429DW1T1
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Symbol
V_CEO
V_CBO
V_EBO
I_C
Value
45
55
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation (Note 1)
T_A = 25°C
Thermal Resistance,
Junction−to−Ambient
Symbol
P_D
R_qJA
Max
150
833
Unit
mW
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended foot print.
http://onsemi.com
(3)
(2)
(1)
(4)
(5)
(6)
SC−88
(SOT−363)
1
419B
MARKING DIAGRAM
1T M G
G
1
1T
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MBT6429DW1T1 SC−88 3000/Tape & Reel
MBT6429DW1T1G SC−88 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
1
December, 2005 − Rev. 2
Publication Order Number:
MBT6429DW1T1/D