MBRM120ET1G Datasheet, PDF (4/6 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G
1000
100
150
T_J = 25C
148
146
R_tja = 33.72C/W
51C/W
69C/W
83.53C/W
96C/W
10
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
144
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
V_R, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T_J therefore must include forward and reverse power effects. The allowable operating
T_J may be calculated from the equation:
T_J = T_Jmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T_J due to reverse bias under DC conditions only and is calculated as T_J = T_Jmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
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