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MBRM120ET1G Datasheet, PDF (3/6 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier
MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G
10
TJ = 150C
TJ = 100C
1.0
TJ = 25C
TJ = −40C
10
TJ = 150C
TJ = 100C
1.0
TJ = 25C
0.1
0.2
0.4
0.6
0.8
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.1
0.2
0.4
0.6
0.8
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 2. Maximum Forward Voltage
100E−3
10E−3
1E−3
100E−6
10E−6
1E−6
100E−9
10E−9
0
TJ = 150C
TJ = 100C
TJ = 25C
5.0
10
15
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
100E−3
10E−3
1E−3
100E−6
10E−6
1E−6
100E−9
10E−9
20
0
TJ = 150C
TJ = 100C
TJ = 25C
5.0
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
dc
FREQ = 20 kHz
SQUARE WAVE
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
45 65 85 105 125 145 165
TL, LEAD TEMPERATURE (C)
Figure 5. Current Derating
0.7
dc
SQUARE
0.6
WAVE
Ipk/Io = p
0.5
Ipk/Io = 5
0.4
Ipk/Io = 10
0.3
Ipk/Io = 20
0.2
0.1
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
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