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| MBRM120ET1G Datasheet, PDF (2/6 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier | |||
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MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
20
V
VRWM
VR
Average Rectified Forward Current
(At Rated VR, TC = 130ï°C)
IO
A
1.0
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 135ï°C)
IFRM
A
2.0
NonâRepetitive Peak Surge Current
(NonâRepetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
A
50
Storage Temperature
Tstg
â65 to 150
ï°C
Operating Junction Temperature
TJ
â65 to 150
ï°C
Voltage Rate of Change
(Rated VR, TJ = 25ï°C)
dv/dt
V/ms
10,000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance â JunctionâtoâLead (Anode) (Note 1)
Thermal Resistance â JunctionâtoâTab (Cathode) (Note 1)
Thermal Resistance â JunctionâtoâAmbient (Note 1)
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10.
Symbol
Rtjl
Rtjtab
Rtja
Value
35
23
277
Unit
ï°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
(VR = 20 V)
(VR = 10 V)
(VR = 5.0 V)
2. Pulse Test: Pulse Width ï£ 250 ms, Duty Cycle ï£ 2%.
Symbol
Value
Unit
VF
TJ = 25ï°C
TJ = 100ï°C
V
0.455
0.530
0.595
0.360
0.455
0.540
IR
TJ = 25ï°C
TJ = 100ï°C
mA
10
1600
1.0
500
0.5
300
http://onsemi.com
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