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J111 Datasheet, PDF (4/5 Pages) NXP Semiconductors – N-channel silicon field-effect transistors | |||
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J111, J112
20
15
J112
10
J111
Cgs
10
J113
7.0
7.0
5.0
Tchannel = 25°C
VDS = 15 V
3.0
5.0
Cgd
3.0
Tchannel = 25°C
2.0
(Cds IS NEGLIGIBLE)
1.5
2.0
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
0.03 0.05 0.1
0.3 0.5 1.0
3.0 5.0 10
30
ID, DRAIN CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Forward Transfer Admittance
Figure 7. Typical Capacitance
200
IDSS 25 50 mA 75 mA 100 mA
= 10 mA
160 mA
125 mA
120
80
40
Tchannel = 25°C
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS, GATEâSOURCE VOLTAGE (VOLTS)
Figure 8. Effect of GateâSource Voltage
On DrainâSource Resistance
2.0
1.8
ID = 1.0 mA
VGS = 0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
â70 â40 â10 20 50 80 110 140 170
Tchannel, CHANNEL TEMPERATURE (°C)
Figure 9. Effect of Temperature On
DrainâSource OnâState Resistance
100
Tchannel = 25°C
10
90
9.0
80
8.0
70
rDS(on) @ VGS = 0
60
50
7.0
6.0
VGS(off)
5.0
40
4.0
30
3.0
20
2.0
10
1.0
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
IDSS, ZEROâGATEâVOLTAGE DRAIN CURRENT (mA)
Figure 10. Effect of IDSS On DrainâSource
Resistance and GateâSource Voltage
NOTE 2
The ZeroâGateâVoltage Drain Current (IDSS), is the
principle determinant of other J-FET characteristics.
Figure 10 shows the relationship of GateâSource Off
Voltage (VGS(off) and DrainâSource On Resistance
(rds(on)) to IDSS. Most of the devices will be within ±10%
of the values shown in Figure 10. This data will be useful
in predicting the characteristic variations for a given part
number.
For example:
Unknown
rds(on) and VGS range for an J112
The electrical characteristics table indicates that an J112
has an IDSS range of 25 to 75 mA. Figure 10, shows
rds(on) = 52 W for IDSS = 25 mA and 30 W for
IDSS = 75 mA. The corresponding VGS values are 2.2 V
and 4.8 V.
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