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J111 Datasheet, PDF (2/5 Pages) NXP Semiconductors – N-channel silicon field-effect transistors | |||
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J111, J112
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate âSource Breakdown Voltage
(IG = â1.0 mAdc)
Gate Reverse Current
(VGS = â15 Vdc)
Gate Source Cutoff Voltage
(VDS = 5.0 Vdc, ID = 1.0 mAdc)
J111
J112
DrainâCutoff Current
(VDS = 5.0 Vdc, VGS = â10 Vdc)
ON CHARACTERISTICS
ZeroâGateâVoltage Drain Current(1)
(VDS = 15 Vdc)
J111
J112
Symbol
V(BR)GSS
IGSS
VGS(off)
ID(off)
IDSS
Static DrainâSource On Resistance
(VDS = 0.1 Vdc)
Drain Gate and Source Gate OnâCapacitance
(VDS = VGS = 0, f = 1.0 MHz)
Drain Gate OffâCapacitance
(VGS = â10 Vdc, f = 1.0 MHz)
Source Gate OffâCapacitance
(VGS = â10 Vdc, f = 1.0 MHz)
1. Pulse Width = 300 ms, Duty Cycle = 3.0%.
J111
J112
rDS(on)
Cdg(on)
+
Csg(on)
Cdg(off)
Csg(off)
Min
35
â
â 3.0
â 1.0
â
20
5.0
2.0
â
â
â
â
â
Max
â
â 1.0
â 10
â 5.0
1.0
â
â
â
30
50
28
5.0
5.0
Unit
Vdc
nAdc
Vdc
nAdc
mAdc
W
pF
pF
pF
ORDERING INFORMATION
Device
Package
Shippingâ
J111RL1
J111RL1G
TOâ92
TOâ92
(PbâFree)
2000 Units / Tape & Reel
J111RLRA
J111RLRAG
TOâ92
TOâ92
(PbâFree)
2000 Units / Tape & Reel
J111RLRP
J111RLRPG
TOâ92
TOâ92
(PbâFree)
2000 Units / Tape & Reel
J112
J112G
TOâ92
TOâ92
(PbâFree)
1000 Units / Bulk
J112RL1
J112RL1G
TOâ92
TOâ92
(PbâFree)
2000 Units / Tape & Reel
J112RLRA
J112RLRAG
TOâ92
TOâ92
(PbâFree)
2000 Units / Tape & Reel
â For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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