FH105A Datasheet, PDF (4/8 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

FH105A
S Parameter
S11e
f=200MHz to 2000MHz(200MHz Step)
S21e
f=200MHz to 2000MHz(200MHz Step)
j10
0
--j10
j50
90°
120°
60°
j25
j100
VCE=5V
j150
IC=10mA
j200
j250
150° 0.2GHz
VCE=5V
IC=5mA
0.2GHz
2.0GHz
2.0GHz
10_{2.02G.02HG.0zH}²_G⁵_{zHz2.0GIVHCCz=E1}5₀₌0_0m5.V1_2A0_GVI0_{CHC=zE50=m.52}1_AVG50_0H.2zGH25_z0_{----j0j22.025G00Hz}
±180°
VICC=E3=m2AVVCE0.=21GVHz
2.0GHz
2.0GHz ^{4 8}
IC=1mA 0.2GHz
12
--j150
--150°
VCE=1V
--j25 ^IC=1mA
VCE=2V
IC=3mA
--j50
--j100
IT00331
--120°
--90°
--60°
30°
16 20 ₀
--30°
IT00332
S12e
f=200MHz to 2000MHz(200MHz Step)
150°
±180°
120°
90°
60°
VCE=5V
IC=5mA
2.0GHz
2.0GHz
2.0GHz
VCE=5V
2.0GHz
IC=10mA
30°
0.2GHz
0.2GHz
0.2GHz
VCE=2V
IC=3mA
VCE=1V
IC=1mA
0.2GHz
0.04 0.08 0.12 0.16 0.2 ₀
--150°
--120°
--90°
--30°
--60°
IT00333
S22e
f=200MHz to 2000MHz(200MHz Step)
j50
j25
j10
j100
j150
j200
j250
0
10
25
--j10
--j25
150
50 100 _VCE=5V 250
2.20.G0GHHz ^{zIC=100.m2GA0.H20G.z2HGzHz 0.2GHz}
2.0GHz
--j250
2.0GHz
--j200
VCE=5V
VCE=1V _--j150
IC=5mA
VCE=2V
IC=1mA
--j100
IC=3mA
--j50
IT00334
No. A1126-4/8