FH105A Datasheet, PDF (2/8 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

FH105A
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=10V, IE=0A
1.0
μA
Emitter Cutoff Current
IEBO
VEB=1V, IC=0A
10
μA
DC Current Gain
hFE
VCE=5V, IC=10mA
90
200
DC Current Gain Ratio
hFE(small/large) VCE=5V, IC=10mA
0.7
0.95
Base-to-Emitter Voltage Diffrence
Gain-Bandwidth Product
VBE(large-small) VCE=5V, IC=10mA
fT
VCE=5V, IC=10mA
1.0
mV
5
8
GHz
Output Capacitance
Forward Transfer Gain
Cob
⏐S21e⏐²
VCB=10V, f=1MHz
VCE=5V, IC=10mA, f=1.5GHz
0.45
8
10
0.7
pF
dB
Noise Figure
NF
VCE=5V, IC=5mA, f=1.5GHz
1.4
3.0 dB
Note) The specifications shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which
pair capability is also shown.
Ordering Information
Device
FH105A-TR-E
Package
MCP6
Shipping
3,000pcs./reel
memo
Pb Free
hFE -- IC
5
VCE=5V
3
2
100
7
5
3
2
10
7
5
0.1
2 3 5 7 _1.0 2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀
Collector Current, IC -- mA
IT00322
fT -- IC
2
10
7
V CE=5V
5
V CE=1V
3
2
1.0
1.0
2
3
5 7 ₁₀
2
Collector Current, IC -- mA
3
5
IT14098
No. A1126-2/8