FH105A Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

Ordering number : ENA1126A
FH105A
RF Transistor
10V, 30mA, fT=8GHz, NPN Dual MCP6
http://onsemi.com
Features
• _{Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting}
efficiency greatly
• _{The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package}
• _{Optimal for differential amplification due to excellent thermal equilibrium and pair capability}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
20
V
10
V
1.5
V
30 mA
150 mW
300 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7026A-005
2.0
654
0.15
FH105A-TR-E
0 to 0.08
12
0.65
3
0.3
1 : Collector1
2 : Base2
3 : Collector2
4 : Emitter2
5 : Emitter1
6 : Base1
MCP6
Product & Package Information
• Package
: MCP6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TR
Marking
1
1
TR
LOT No.
105
LOT No.
Electrical Connection
B1 E1 E2
Tr1
Tr2
C1 B2 C2
Semiconductor Components Industries, LLC, 2013
August, 2013
82912 TKIM/O2908AB MSIM TC-00001689 No. A1126-1/8