CM1293 Datasheet, PDF (4/10 Pages) California Micro Devices Corp – 2, 4, and 8-Channel Low Capacitance ESD Protection Arrays

CM1293
ELECTRICAL OPERATING CHARACTERISTICS^{(SEE NOTE 1)}
SYMBOL PARAMETER
CONDITIONS
V_P
Operating Supply Voltage (V_P-V_N)
I_P
Operating Supply Current
(V_P-V_N)=3.3V
V
Diode Forward Voltage
F
Top Diode
Bottom Diode
I = 8mA; T =25°C
F
A
I
Channel Leakage Current
LEAK
C
Channel Input Capacitance
IN
T =25°C; V =5V, V =0V
A
P
N
At 1 MHz, V =3.3V, V =0V, V =1.65V
P
N
IN
MIN TYP MAX UNITS
3.3 5.5
V
8.0 μA
0.60 0.80 0.95 V
0.60 0.80 0.95 V
±0.1 ±1.0 μA
1.0 1.5 pF
ΔC_IN
Channel Input Capacitance
Matching
At 1 MHz, V_P=3.3V, V_N=0V, V_IN=1.65V
0.02
pF
C_MUTUAL
Mutual Capacitance between
At 1 MHz, V_P=3.3V, V_N=0V, V_IN=1.65V
signal pin and adjacent signal pin
0.11
pF
V
ESD Protection
ESD
Peak Discharge Voltage at any
channel input, in system
Contact discharge per
Notes 3 and 4; T_A=25°C
±8
kV
IEC 61000-4-2 standard
V_CL
Channel Clamp Voltage
Positive Transients
Negative Transients
T_A=25°C, I_PP = 1A, t_P = 8/20μs;
Notes 4
+8.8
V
-1.4
V
R
Dynamic Resistance
DYN
Positive Transients
Negative Transients
I = 1A, t = 8/20μs
PP
P
Any I/O pin to Ground; Note 4
0.7
Ω
0.4
Ω
Note 1: All parameters specified at T_A = -40°C to +85°C unless otherwise noted.
Note 2: Human Body Model per MIL-STD-883, Method 3015, C_Discharge = 100pF, R_Discharge = 1.5KΩ, V_P = 3.3V, V_N grounded.
Note 3: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_P = 3.3V, V_N grounded.
Note 4: These measurements performed with no external capacitor on V_P (V_P floating).
Rev. 3 | Page 4 of 10 | www.onsemi.com