CAT28LV64 Datasheet, PDF (4/15 Pages) Catalyst Semiconductor – 64K-Bit CMOS PARALLEL E2PROM

CAT28LV64
Table 4. CAPACITANCE (T_A = 25°C, f = 1.0 MHz)
Symbol
Test
Max
Conditions
C_I/O (Note 5)
Input/Output Capacitance
10
C_IN (Note 5)
Input Capacitance
6
5. This parameter is tested initially and after a design or process change that affects the parameter.
V_I/O = 0 V
V_IN = 0 V
Units
pF
pF
Table 5. D.C. OPERATING CHARACTERISTICS (V_CC = 3.0 V to 3.6 V, unless otherwise specified.)
Limits
Symbol
Parameter
Test Conditions
Min
Typ
Max
I_CC
V_CC Current (Operating, TTL)
CE = OE = V_IL,
8
f = 1/t_RC min, All I/O’s Open
I_SBC (Note 6)
V_CC Current (Standby, CMOS)
CE = V_IHC, All I/O’s Open
100
I_LI
Input Leakage Current
V_IN = GND to V_CC
−1
1
I_LO
Output Leakage Current
V_OUT = GND to V_CC,
−5
5
CE = V_IH
V_IH (Note 6)
High Level Input Voltage
2
V_CC + 0.3
V_IL
Low Level Input Voltage
V_OH
High Level Output Voltage
V_OL
Low Level Output Voltage
V_WI
Write Inhibit Voltage
6. V_IHC = V_CC − 0.3 V to V_CC + 0.3 V.
I_OH = −100 mA
I_OL = 1.0 mA
−0.3
0.6
2
0.3
2
Table 6. A.C. CHARACTERISTICS, READ CYCLE (V_CC = 3.0 V to 3.6 V, unless otherwise specified.)
28LV64−15
28LV64−20
28LV64−25
Symbol
Parameter
Min
Max
Min
Max
Min
Max
t_RC
Read Cycle Time
150
200
250
t_CE
CE Access Time
150
200
250
t_AA
Address Access Time
150
200
250
t_OE
OE Access Time
70
80
100
t_LZ (Note 7)
CE Low to Active Output
0
0
0
t_OLZ (Note 7)
OE Low to Active Output
0
0
0
t_HZ (Notes 7, 8) CE High to High−Z Output
50
50
55
t_OHZ (Notes 7, 8) OE High to High−Z Output
50
50
55
t_OH (Note 7)
Output Hold from Address Change
0
0
0
7. This parameter is tested initially and after a design or process change that affects the parameter.
8. Output floating (High−Z) is defined as the state when the external data line is no longer driven by the output buffer.
Units
mA
mA
mA
mA
V
V
V
V
V
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
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