BTA25H-600CW3G Datasheet, PDF (4/6 Pages) ON Semiconductor – Triacs Silicon Bidirectional Thyristors

BTA25H−600CW3G, BTA25H−800CW3G
25
20
Q3
15
Q1
Q2
10
5
V_D = 12 V
R_I = 30 W
1.30
1.10
Q1
0.90
Q3
0.70
Q2
0.50
0.30
V_D = 12 V
R_I = 30 W
0
−40 −20 0 20 40 60 80 100 120 140 160
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Trigger Current Variation
0.10
−40 −20 0 20 40 60 80 100 120 140 160
T_J, JUNCTION TEMPERATURE (°C)
Figure 7. Gate Trigger Voltage Variation
75
V_D = 12 V
65
R_I = 30 W
55 _{Q1 Q2}
45
Q3
35
25
15
−40 −20 0 20 40 60 80 100 120 140 160
T_J, JUNCTION TEMPERATURE (°C)
Figure 8. Latching Current Voltage
200 V_RMS
ADJUST FOR
I_TM, 60 Hz V_AC
TRIGGER
CHARGE
CHARGE
CONTROL
NON‐POLAR
C_L
L_L
MEASURE
I
MT2
1N914 _{51 W}
MT1
G
1N4007
-
200 V
+
Note: Component values are for verification of rated (di/dt)_c. See AN1048 for additional information.
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)_c
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