|
BTA25H-600CW3G Datasheet, PDF (2/6 Pages) ON Semiconductor – Triacs Silicon Bidirectional Thyristors | |||
|
◁ |
BTA25Hâ600CW3G, BTA25Hâ800CW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctionâtoâCase (AC)
JunctionâtoâAmbient
Maximum Lead Temperature for Soldering Purposes 1/8â³ from Case for 10 seconds
Symbol
RqJC
RqJA
TL
Value
1.8
60
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
IDRM,
TJ = 25°C
IRRM
â
â
TJ = 150°C
â
â
Peak On-State Voltage (Note 2)
(ITM = ± 35 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(â)
MT2(â), G(â)
VTM
â
â
IGT
â
â
â
â
â
â
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±100 mA)
Latching Current (VD = 12 V, IG = 42 mA)
MT2(+), G(+)
MT2(+), G(â)
MT2(â), G(â)
IH
â
â
IL
â
â
â
â
â
â
Gate Trigger Voltage (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(â)
MT2(â), G(â)
VGT
â
â
â
â
â
â
Gate NonâTrigger Voltage (TJ = 150°C)
MT2(+), G(+)
MT2(+), G(â)
MT2(â), G(â)
VGD
0.15
â
0.15
â
0.15
â
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 150°C, No Snubber)
Critical Rate of Rise of OnâState Current
(TJ = 150°C, f = 120 Hz, IG = 2 x IGT, tr ⤠100 ns)
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 150°C)
2. Indicates Pulse Test: Pulse Width ⤠2.0 ms, Duty Cycle ⤠2%.
(dI/dt)c
4.0
â
dI/dt
â
â
dV/dt
500
â
Max Unit
mA
0.005
15
1.55
V
mA
35
35
35
50
mA
mA
75
75
75
V
1.3
1.3
1.3
V
â
â
â
â
A/ms
50
A/ms
â
V/ms
http://onsemi.com
2
|
▷ |