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BTA25H-600CW3G Datasheet, PDF (1/6 Pages) ON Semiconductor – Triacs Silicon Bidirectional Thyristors | |||
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BTA25H-600CW3G,
BTA25H-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
⢠Blocking Voltage to 800 Volts
⢠On-State Current Rating of 25 Amperes RMS at 95°C
⢠Uniform Gate Trigger Currents in Three Quadrants
⢠High Immunity to dV/dt â 500 V/ms minimum at 150°C
⢠Minimizes Snubber Networks for Protection
⢠Industry Standard TO-220AB Package â Internally Isolated
⢠High Commutating dI/dt â 4.0 A/ms minimum at 150°C
⢠Internally Isolated (2500 VRMS)
⢠These are PbâFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive OffâState Voltage (Note 1) VDRM,
V
(TJ = â40 to 150°C, Sine Wave,
VRRM
50 to 60 Hz, Gate Open)
BTA25Hâ600CW3G
600
BTA25Hâ800CW3G
800
On-State RMS Current (Full Cycle Sine
IT(RMS)
25
A
Wave, 60 Hz, TC = 95°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
250
A
260
A2sec
NonâRepetitive Surge Peak OffâState
Voltage (TJ = 25°C, t = 8.3 ms)
VDSM/ VDRM/VRRM
V
VRSM
+100
Peak Gate Current (TJ = 150°C, t ⤠20 ms) IGM
4.0
A
Average Gate Power (TJ = 150°C)
PG(AV)
0.5
W
Operating Junction Temperature Range
TJ â40 to +150 °C
Storage Temperature Range
Tstg â40 to +150 °C
RMS Isolation Voltage
(t = 300 ms, R.H. ⤠30%, TA = 25°C)
Viso
2500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
25 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4
MARKING
DIAGRAM
123
TOâ220AB
CASE 221A
STYLE 12
HT
BTA25âxCWG
AYWW
x = 6 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = PbâFree Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
No Connection
ORDERING INFORMATION
Device
BTA25Hâ600CW3G
Package
Shipping
TOâ220AB 50 Units / Rail
(PbâFree)
BTA25Hâ800CW3G TOâ220AB 50 Units / Rail
(PbâFree)
*For additional information on our PbâFree strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
1
September, 2009 â Rev. 0
Publication Order Number:
BTA25Hâ600CW3/D
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