BCP53-16T3G Datasheet, PDF (4/5 Pages) ON Semiconductor – PNP Silicon Epitaxial Transistors

2N7002E
TYPICAL CHARACTERISTICS
40
C_iss
30
T_J = 25°C
V_GS = 0 V
20
C_oss
10
C_rss
0
0
4
8
12
16
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
10
V_GS = 0 V
5
T_J = 25°C
4 ^ID ^{= 0.25 A}
3
2
1
0
0
0.2
0.4
0.6
0.8
1
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1
T_J = 85°C
T_J = 25°C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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4