BCP53-16T3G Datasheet, PDF (3/5 Pages) ON Semiconductor – PNP Silicon Epitaxial Transistors

2N7002E
TYPICAL CHARACTERISTICS
2.0
V_GS = 10 V
9.0 V
1.6
8.0 V
7.0 V
6.0 V
1.2
5.0 V
4.5 V
4.0 V
3.5 V
0.8
0.4
0
0
3.0 V
2.5 V
2.0 V
2
4
6
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
2.4
V_GS = 4.5 V
2.0
1.6
1.2
0.8
T_J = 125°C
T_J = 85°C
T_J = 25°C
T_J = −55°C
0.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
I_D, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.6
I_D = 250 mA
1.2
I_D = 75 mA
0.8
1.2
0.8
T_J = 25°C
0.4
T_J = 125°C
0
T_J = −55°C
0
2
4
6
V_GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
2.4
V_GS = 10 V
2.0
1.6
1.2
0.8
0.4
T_J = 125°C
T_J = 85°C
T_J = 25°C
T_J = −55°C
0
0
0.2
0.4
0.6
0.8
1.0
1.2
I_D, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Temperature
2.2
I_D = 0.2 A
1.8
V_GS = 4.5 V
1.4
V_GS = 10 V
1.0
0.4
2
4
6
8
10
V_GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
0.6
−50 −25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. On−Resistance Variation with
Temperature
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