74HC574 Datasheet, PDF (4/8 Pages) NXP Semiconductors – Octal D-type flip-flop; positive edge-trigger; 3-state

74HC574
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
V_CC
Guaranteed Limit
(V) _{*55 to 25_C v85_C v125_C Unit}
V_IH
Minimum High−Level Input V_out = V_CC – 0.1 V
Voltage
|I_out| v 20 mA
2.0
1.5
1.5
1.5
V
3.0
2.1
2.1
2.1
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
V_IL
Maximum Low−Level Input V_out = 0.1 V
Voltage
|I_out| v 20 mA
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
6.0
1.8
1.8
1.8
V_OH Minimum High−Level Output V_in = V_IH
Voltage
|I_out| v 20 mA
2.0
1.9
4.5
4.4
6.0
5.9
1.9
1.9
V
4.4
4.4
5.9
5.9
V_OH Minimum High−Level Output V_in = V_IH
Voltage
|I_out| v 2.4 mA 3.0
|I_out| v 6.0 mA 4.5
|I_out| v 7.8 mA 6.0
V_OL
Maximum Low−Level Output V_in = V_IL
2.0
Voltage
|I_out| v 20 mA
4.5
6.0
2.48
3.98
5.48
0.1
0.1
0.1
2.34
2.2
V
3.84
3.7
5.34
5.2
0.1
0.1
V
0.1
0.1
0.1
0.1
I_in
Maximum Input Leakage
Current
V_in = V_IL
|I_out| v 2.4 mA 3.0
|I_out| v 6.0 mA 4.5
|I_out| v 7.8 mA 6.0
V_in = V_CC or GND
6.0
0.26
0.26
0.26
$0.1
0.33
0.4
0.33
0.4
0.33
0.4
$1.0
$1.0
mA
I_OZ
Maximum Three−State
Leakage Current
Output in High−Impedance State 6.0
V_in = V_IL or V_IH
V_out = V_CC or GND
$0.5
$5.0
$10
mA
I_CC
Maximum Quiescent Supply V_in = V_CC or GND
Current (per Package)
I_out = 0 mA
6.0
4.0
40
40
mA
7. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
http://onsemi.com
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