2N5883 Datasheet, PDF (4/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,200W)

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
10
7.0
2N5883, 2N5884 (PNP)
T_J = 25°C
5.0
2N5885, 2N5886 (NPN)
V_CC = 30 V
3.0
I_C/I_B = 10
t_s
I_B1 = I_B2
2.0
t_s
1.0
0.7
0.5
t_f
0.3
0.2
t_f
0.1
0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (AMPERES)
Figure 6. Turn−Off Time
20 30
PNP DEVICES
2N5883 and 2N5884
1000
700
500 T_J = 150°C
300
200 ^25°C
−55 °C
100
70
50
30
20
V_CE = 4.0 V
10
0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
I_C, COLLECTOR CURRENT (AMPERES)
Figure 8. DC Current Gain
3000
2000
C_ob
C_ib
T_J = 25°C
1000
700
C_ib
500
300
0.1 0.2
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
C_ob
0.5 1.0 2.0 5.0 10 20
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 100
NPN DEVICES
2N5885 and 2N5886
1000
700
500
T_J = 150°C
300
200
V_CE = 4.0 V
100
25°C
70
50
30
−55 °C
20
10
0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (AMPERES)
Figure 9. DC Current Gain
20 30
2.0
1.6
I_C = 2.0 A
5.0 A
10 A
1.2
T_J = 25°C
20 A
0.8
0.4
0
0.01 0.02
0.05 0.1 0.2 0.5 1.0 2.0
I_B, BASE CURRENT (AMPERES)
5.0 10
Figure 10. Collector Saturation Region
2.0
T_J = 25°C
1.6
I_C = 2.0 A 5.0 A
10 A
20 A
1.2
0.8
0.4
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
I_B, COLLECTOR CURRENT (AMPERES)
Figure 11. Collector Saturation Region
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